PRODUCTION OF HIGH-QUALITY AMORPHOUS-SILICON FILMS BY EVAPORATIVE SILANE SURFACE DECOMPOSITION

被引:169
作者
DOYLE, J [1 ]
ROBERTSON, R [1 ]
LIN, GH [1 ]
HE, MZ [1 ]
GALLAGHER, A [1 ]
机构
[1] NBS,BOULDER,CO 80309
关键词
D O I
10.1063/1.341539
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:3215 / 3223
页数:9
相关论文
共 37 条
[1]   EXPONENTIAL ABSORPTION-EDGE IN HYDROGENATED A-SI FILMS [J].
ABELES, B ;
WRONSKI, CR ;
TIEDJE, T ;
CODY, GD .
SOLID STATE COMMUNICATIONS, 1980, 36 (06) :537-540
[2]   PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY BIASED ACTIVATED REACTIVE EVAPORATION [J].
ANDERSON, JC ;
BISWAS, S ;
GUO, H .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :604-613
[3]  
Arthur N. L., 1978, REV CHEM INTERMED, V2, P37
[4]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J].
BOOKER, GR ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :301-&
[5]  
CETINI G, 1969, RIC SCI, V39, P392
[6]  
DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P4
[7]   KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].
FARROW, RFC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907
[8]  
GALLAGHER A, IN PRESS INT J SOLAR
[9]  
GELAIN C, 1968, SOC FRAN CERAM B, V80, P431
[10]   A THEORETICAL-STUDY OF THE HEATS OF FORMATION OF SI2HN (N = 0-6) COMPOUNDS AND TRISILANE [J].
HO, P ;
COLTRIN, ME ;
BINKLEY, JS ;
MELIUS, CF .
JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (15) :3399-3406