Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

被引：44

作者：

Yu, LS ^{[1
]}

Xing, QJ

Qiao, D

Lau, SS

Boutros, KS

Redwing, JM

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Epitron ATMI, Phoenix, AZ 85027 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively. (C) 1998 American Institute of Physics. [0003-951(98)04552- 5].

引用

页码：3917 / 3919

页数：3

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