Real time spectroscopic ellipsometry of CuInSe2: Growth dynamics, dielectric function, and its dependence on temperature

被引:29
作者
Begou, Thomas [1 ]
Walker, James D. [2 ]
Attygalle, Dinesh [2 ]
Ranjan, Vikash [1 ]
Collins, R. W. [2 ]
Marsillac, Sylvain [1 ]
机构
[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 07期
关键词
CuInSe2; thin films; ellipsometry; nucleation; growth; dielectric function; INTERBAND CRITICAL-POINTS; SILICON;
D O I
10.1002/pssr.201105204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This Letter reports real time spectroscopic ellipsometry studies of copper indium diselenide (CuInSe2; CIS). A Volmer-Weber nucleation process was identified from the measured thickness dynamics, and accurate dielectric functions were obtained in-situ, avoiding oxidation while correcting for surroughness. The energy and broadening parameters of the critical points in the dielectric functions obtained versus measurement temperature (including three previously unreported ones) yield a database that is valuable for on-line materials analysis. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:217 / 219
页数:3
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