Very low density two-dimensional hole gas in an inverted GaAs/AlAs interface

被引：12

作者：

Hanein, Y

Shtrikman, H

Meirav, U

机构：

[1] Braun Center for Submicron Research, Weizmann Institute of Science

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The density of the 2DHG is easily and reproducibly varied between 5 x 10(9) and 5 x 10(11) cm(-2). The mobility of the 2DHG is highly anisotropic in the (311)A plane. (C) 1997 American Institute of Physics.

引用

页码：1426 / 1428

页数：3