The analysis of mass transfer in system β-SiC-α-SiC under silicon carbide sublimation growth

被引：28

作者：

Avrov, DD ^{[1
]}

Bakin, AS ^{[1
]}

Dorozhkin, SI ^{[1
]}

Rastegaev, VP ^{[1
]}

Tairov, YM ^{[1
]}

机构：

[1] St Petersburg Electrotech Univ, Dept Microelect, St Petersburg 197376, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

mass transfer; silicon carbide; sublimation growth; crysallization;

D O I：

10.1016/S0022-0248(98)01215-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The aim of the present paper is to discuss our results of the investigation (both theoretical and experimental) of mass transfer in the beta-SiC-alpha-SiC system in conditions of about zero temperature gradient. Growth temperature was in the range 1800-2300 degrees C. Modeling of growth of silicon carbide crystals have been carried out both for vacuum (10(-3) Pa) and for a gas (nitrogen, argon or their mixture) atmosphere. The gas pressure was in the range 10(2)-10(5) Pa. Growth rate in the range from 0.01 to 1.5 mm/h for growth in vacuum and 0.001-0.15 mm/h for growth in gas have been calculated. Experimental results obtained are in a good agreement with theoretically predicted ones. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：1011 / 1014

页数：4