High-frequency performance of diamond field-effect transistor

被引：92

作者：

Taniuchi, H ^{[1
]}

Umezawa, H

Arima, T

Tachiki, M

Kawarada, H

机构：

[1] Waseda Univ, Sch Sci & Engn, Tokyo 1690072, Japan

[2] Japan Sci & Technol Corp, CREST, Tokyo 1020081, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

diamond; f(max) f(T); hydrogen-terminated surface; MESFET;

D O I：

10.1109/55.936353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave performance of a diamond metal-semiconductor held-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 mum and a source-gate spacing of 0.1 mum were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process, A maximum transconductance of 70 mS/mm was obtained on a 2 mum gate MESFET at V-GS = -1.5 V and V-DS = -5 V for which a cutoff frequency f(T) and a maximum oscillating frequency f(max) of 2.2 GHz and 7 GHz were obtained, respectively.

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页码：390 / 392

页数：3

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