Diamond surface-channel FET structure with 200 V breakdown voltage

被引：97

作者：

Gluche, P

Aleksov, A

Vescan, A

Ebert, W

Kohn, E

机构：

[1] Dept. of Electron Devices and Circt., University of Ulm

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期

关键词：

D O I：

10.1109/55.641441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhancement mode diamond FET using a hydrogen-terminated surface as hole conductive channel has been fabricated with 200 V gate to drain breakdown voltage, At the 8.5-mu m gate length the maximum drain current was 22 mA/mm. 90 mA/mm maximum drain current was obtained at a gate length of 3.0 mu m. Scaling to below 1 mu m gate length assuming undegraded breakdown conditions will result in a projected RF power handling capability above 6 W/mm.

引用

页码：547 / 549

页数：3

共 8 条

[1] ELECTRIC PROPERTIES OF METAL DIAMOND INTERFACES UTILIZING HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS
AOKI, M
KAWARADA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (5B): : L708 - L711
[2] Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
Hayashi, K
Yamanaka, S
Okushi, H
Kajimura, K
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (03) : 376 - 378
[3] HOKAZONO A, 1996, IN PRESS DIAMOND REL
[4] CHARACTERIZATION OF HYDROGEN-TERMINATED CVD DIAMOND SURFACES AND THEIR CONTACT PROPERTIES
KAWARADA, H
AOKI, M
SASAKI, H
TSUGAWA, K
[J]. DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 961 - 965
[5] ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS
KAWARADA, H
AOKI, M
ITO, M
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1563 - 1565
[6] BARRIER HEIGHTS OF METAL CONTACTS ON H-TERMINATED DIAMOND - EXPLANATION BY METAL-INDUCED GAP STATES AND INTERFACE DIPOLES
MONCH, W
[J]. EUROPHYSICS LETTERS, 1994, 27 (06): : 479 - 484
[7] PROPERTIES OF METAL DIAMOND INTERFACES AND EFFECTS OF OXYGEN ADSORBED ONTO DIAMOND SURFACE
MORI, Y
KAWARADA, H
HIRAKI, A
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 940 - 941
[8] High-temperature, high-voltage operation of pulse-doped diamond MESFET
Vescan, A
Gluche, P
Ebert, W
Kohn, E
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (05) : 222 - 224

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