560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs

被引：38

作者：

Klude, M ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28359 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期

关键词：

D O I：

10.1063/1.1411989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature continuous wave (cw)-lasing emission at wavelengths around 560 nm was obtained from ZnSe-based laser diodes grown on GaAs substrates. The wavelengths of the devices are most suitable as lightsources for plastic optical fibers. To achieve this emission wavelength, CdZnSSe quantum wells with high Cd content were employed as active region. The growth of such quantum wells requires Se-rich growth conditions. (C) 2001 American Institute of Physics.

引用

页码：2523 / 2525

页数：3

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