610-NM BAND ALCAINP SINGLE-QUANTUM-WELL LASER-DIODE

被引：34

作者：

BOUR, DP ^{[1
]}

TREAT, DW ^{[1
]}

BEERNINK, KJ ^{[1
]}

KRUSOR, BS ^{[1
]}

GEELS, RS ^{[1
]}

WELCH, DF ^{[1
]}

机构：

[1] SDL INC,SAN JOSE,CA 95134

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 02期

关键词：

D O I：

10.1109/68.275404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The short-wavelength limits of AlGaInP visible laser diodes with Al0.5In0.5P cladding layers, and GaxIn1-xP single quantum well (QW) active regions are investigated. Good performance is maintained throughout the 620 nm band, but the characteristics rapidly degrade in the 610 nm band. Biaxial-compression and -tension were compared, with the case of tension yielding slightly better performance. Using a 25angstrom Ga0.45In0.55P QW, a wavelength of 614 mm was obtained, while a 50angstrom Ga0.6In0.4P QW emitted at 620 nm with a threshold current density of 0.8 kA/cm2. These results with thin single QWs indicate the effectiveness of using an Al0.5In0.5P cladding layer to reduce electron leakage.

引用

页码：128 / 131

页数：4

共 10 条

[1]

BOUR DP, 1992, J CRYST GROWTH, V124, P761

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P20

[3] ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES [J].