LOW-THRESHOLD OPERATION OF TENSILE-STRAINED GALNP/ALGALNP MQW LDS EMITTING AT 625-NM

被引:10
作者
TANAKA, T
YANAGISAWA, H
TAKIMOTO, M
YANO, S
MINAGAWA, S
机构
[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19930483
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low threshold current of 47 mA at 20-degrees-C has been obtained in a tensile-strained index-guided AlGaInP LD emitting at 625 nm, which has an active region consisting of five 8 nm-thick QWs with a lattice mismatch of -0.9%. It is shown that optimisation of the tensile-strained QW structure is very useful in improving the performance of AlGaInP LDs at wavelengths shorter than 630 nm.
引用
收藏
页码:722 / 724
页数:3
相关论文
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