ROOM-TEMPERATURE CW OPERATION OF 610NM BAND ALGALNP STRAINED MULTIQUANTUM WELL LASER-DIODES WITH MULTIQUANTUM BARRIER

被引：31

作者：

HAMADA, H

TOMINAGA, K

SHONO, M

HONDA, S

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, SANYO Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 9-degrees towards the (011) direction. The oscillating wavelength at 25-degrees-C is 615 nm, which is the shortest ever reported for AlGaInP laser diodes operating at 25-degrees-C.

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页码：1834 / 1836

页数：3

相关论文

共 8 条

[1] ACTIVATION OF ZN ACCEPTORS IN ALGAINP EPITAXIAL LAYERS GROWN ON MISORIENTED SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HAMADA, H ;

HONDA, S ;

SHONO, M ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

ELECTRONICS LETTERS, 1992, 28 (06) :585-587

[2] ALGAINP VISIBLE LASER-DIODES GROWN ON MISORIENTED SUBSTRATES [J].

HAMADA, H ;

SHONO, M ;

HONDA, S ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1483-1490

[3] SHORT-WAVELENGTH INGAALP VISIBLE LASER-DIODES [J].

HATAKOSHI, G ;

ITAYA, K ;

ISHIKAWA, M ;

OKAJIMA, M ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1476-1482

[4] TRANSVERSE-MODE STABILIZED 630 NM-BAND ALGALNP STRAINED MULTIQUANTUM-WELL LASER-DIODES GROWN ON MISORIENTED SUBSTRATES [J].

HONDA, S ;

HAMADA, H ;

SHONO, M ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

ELECTRONICS LETTERS, 1992, 28 (14) :1365-1367

[5]

Motoda T., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P623, DOI 10.1109/IEDM.1991.235393

[6] HIGH-TEMPERATURE (90-DEGREES-C) CW OPERATION OF 646 NM INGAALP LASER CONTAINING MULTIQUANTUM BARRIER [J].

RENNIE, J ;

WATANABE, M ;

OKAJIMA, M ;

HATAKOSHI, G .

ELECTRONICS LETTERS, 1992, 28 (02) :150-151

[7] DESIGN AND PHOTOLUMINESCENCE STUDY ON A MULTIQUANTUM BARRIER [J].

TAKAGI, T ;

KOYAMA, F ;

IGA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1511-1519

[8] LOW THRESHOLD CURRENT-DENSITY (760 A/CM2) AND HIGH-POWER (45 MW) OPERATION OF STRAINED GA0.42IN0.58P MULTIQUANTUM WELL LASER-DIODES EMITTING AT 632 NM [J].

VALSTER, A ;

VANDERPOEL, CJ ;

FINKE, MN ;

BOERMANS, MJB .

ELECTRONICS LETTERS, 1992, 28 (02) :144-145