HIGH-TEMPERATURE (90-DEGREES-C) CW OPERATION OF 646 NM INGAALP LASER CONTAINING MULTIQUANTUM BARRIER

被引：20

作者：

RENNIE, J

WATANABE, M

OKAJIMA, M

HATAKOSHI, G

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1 Komukai, Toshiba-cho

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CW laser operation of a 646 nm InGaAlP laser, incorporating a multiquantum barrier (MQB), is shown for the first time. The maximum temperature of operation was raised by 20-degrees-C, in comparison to an identical laser without an MQB layer, to 90-degrees-C. This increase is taken as direct evidence of the authenticity of the MQB effect.

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页码：150 / 151

页数：2

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