OMVPE GROWTH OF ALXGA1-XAS

被引：43

作者：

STRINGFELLOW, GB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90269-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：42 / 52

页数：11

共 54 条

[1] GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY [J].

ALLENSON, M ;

BASS, SJ .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :113-115

[2]

ANDRE JP, 1977, I PHYS C SOC A, V33

[3]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[4] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[5] DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS [J].

BAILBE, JP ;

MARTY, A ;

HIEP, PH ;

REY, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1160-1164

[6]

BENEKING H, UNPUBLISHED

[7] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J].

BENZ, KW ;

RENZ, H ;

WEIDLEIN, J ;

PILKUHN, MH .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :185-192

[8] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].

BHATTACHARYA, PK ;

KU, JW ;

OWEN, SJT ;

AEBI, V ;

COOPER, CB ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306

[9]

BLAKESLEE AE, 1971, SPR EL SOC M CLEV

[10] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J].

BOCCONGIBOD, D ;

ANDRE, JP ;

BAUDET, P ;

HALLAIS, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1141-1147

← 1 2 3 4 5 6 →