HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER

被引：19

作者：

RENNIE, J

OKAJIMA, M

WATANABE, M

HATAKOSHI, G

机构：

[1] Research and Development Center, Toshiba Corporation, Kawasaki

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified multiple quantum barrier structure has been applied to a 630 nm band laser diode. The result is a laser exhibiting a high maximum operating temperature, of 74-degrees-C, and a low threshold current of 49 mA. These characteristics correspond to a 22-degrees-C increase in the operation temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to our knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier.

引用

收藏

页码：1857 / 1862

页数：6

相关论文

共 20 条

[1] ALGAINP VISIBLE LASER-DIODES GROWN ON MISORIENTED SUBSTRATES [J].

HAMADA, H ;

SHONO, M ;

HONDA, S ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1483-1490

[2] SHORT-WAVELENGTH INGAALP VISIBLE LASER-DIODES [J].

HATAKOSHI, G ;

ITAYA, K ;

ISHIKAWA, M ;

OKAJIMA, M ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1476-1482

[3] ELECTRON REFLECTANCE OF MULTIQUANTUM BARRIER (MQB) [J].

IGA, K ;

UENOHARA, H ;

KOYAMA, F .

ELECTRONICS LETTERS, 1986, 22 (19) :1008-1010

[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IKEDA, M ;

MORI, Y ;

SATO, H ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1027-1028

[5] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[6] TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT FOR INGAALP VISIBLE LASER-DIODES [J].

ISHIKAWA, M ;

SHIOZAWA, H ;

ITAYA, K ;

HATAKOSHI, G ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (01) :23-29

[7] 636 NM ROOM-TEMPERATURE CW OPERATION BY HETEROBARRIER BLOCKING STRUCTURE INGAAIP LASER-DIODES [J].

ITAYA, K ;

ISHIKAWA, M ;

UEMATSU, Y .

ELECTRONICS LETTERS, 1990, 26 (13) :839-840

[8] ENHANCED CARRIER CONFINEMENT EFFECT BY THE MULTIQUANTUM BARRIER IN 660 NM GAINP/ALINP VISIBLE LASERS [J].

KISHINO, K ;

KIKUCHI, A ;

KANEKO, Y ;

NOMURA, I .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1822-1824

[9] 632.7 NM CW OPERATION (20-DEGREES-C) OF ALGAINP VISIBLE LASER-DIODES FABRICATED ON (001) 6-DEGREES OFF TOWARD [110] GAAS SUBSTRATE [J].

KOBAYASHI, K ;

UENO, Y ;

HOTTA, H ;

GOMYO, A ;

TADA, K ;

HARA, K ;

YUASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09) :L1669-L1671

[10] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932