ROOM-TEMPERATURE OPERATION OF ULTRASHORT WAVELENGTH (619NM) ALGAINP/GAINP TENSILE-STRAINED QUANTUM-WELL LASERS

被引：12

作者：

SUMMERS, HD

BLOOD, P

机构：

[1] Department of Physics and Astronomy, University of Wales, College of Cardiff, Cardiff CF2 3YB

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double quantum well, tensile strained AlGalnP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density J(th) on cavity length and temperature has been investigated and a pulsed J(th) of 2.15 kA cm2 obtained for a 750 mum long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.

引用

页码：1007 / 1008

页数：2

共 7 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].