Low-temperature scanning tunneling microscopy of subsurface shallow dopants: depth dependence of the corrugation for the GaAs(110) surface

被引:4
作者
Depuydt, A. [1 ]
Van Haesendonck, C. [1 ]
Savinov, S. V. [2 ]
Panov, V. I. [2 ]
机构
[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium
[2] Moscow MV Lomonosov State Univ, Chair Quantum Radio Phys, Moscow 119899, Russia
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / Suppl 2期
关键词
PACS: 61.16.Ch; 68.35.Dv; 71.55.Eq; 73.20.Hb;
D O I
10.1007/s003390100659
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the corrugations induced by subsurface donor and acceptor atoms in low-temperature STM images of the (110) surface of doped GaAs single crystals. When the impurities are screened by Friedel charge-density oscillations, the height distribution for Si and Te donors exhibits an oscillatory behavior with four maxima being observable. We argue that these maxima do not correspond to dopant atoms in four different subsurface layers. The maxima rather correspond to four periods in the oscillatory dependence of the corrugation height on the depth of the impurity, which has been predicted by Kobayashi [Phys. Rev. B 54, 17 029 (1996)]. When the charged impurities are not screened, the height of the hillocks induced by donors, and the depth of the depressions induced by acceptors reveal an exponentially decaying distribution.
引用
收藏
页码:S209 / S212
页数:4
相关论文
共 17 条
[1]  
ADAWI I, 1955, PHYS REV, V46, P831
[2]   Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te-doped GaAs single crystals [J].
Depuydt, A ;
Van Haesendonck, C ;
Maslova, NS ;
Panov, VI ;
Savinov, SV ;
Arseev, PI .
PHYSICAL REVIEW B, 1999, 60 (04) :2619-2626
[3]  
DEPUYDT A, PHYS REV B UNPUB
[4]   Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces [J].
Domke, C ;
Heinrich, M ;
Ebert, P ;
Urban, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (05) :2825-2832
[5]   Importance of many-body effects in the clustering of charged Zn dopant atoms in GaAs [J].
Ebert, P ;
Zhang, TJ ;
Kluge, F ;
Simon, M ;
Zhang, ZY ;
Urban, K .
PHYSICAL REVIEW LETTERS, 1999, 83 (04) :757-760
[6]  
EMELYANENKO OV, 1961, SOV PHYS-SOL STATE, V3, P144
[7]   TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929
[8]   DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY [J].
JOHNSON, MB ;
ALBREKTSEN, O ;
FEENSTRA, RM ;
SALEMINK, HWM .
APPLIED PHYSICS LETTERS, 1993, 63 (21) :2923-2925
[9]   Scattering theory of subsurface impurities observed in scanning tunneling microscopy [J].
Kobayashi, K .
PHYSICAL REVIEW B, 1996, 54 (23) :17029-17038
[10]   Charge screening around Si dopant atoms in GaAs by X-STM [J].
Pacherová, O ;
Slezák, J ;
Cukr, M ;
Bartos, I .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1999, 49 (11) :1621-1624