Charge screening around Si dopant atoms in GaAs by X-STM

被引：3

作者：

Pacherová, O ^{[1
]}

Slezák, J ^{[1
]}

Cukr, M ^{[1
]}

Bartos, I ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16000 6, Czech Republic

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1999年 / 49卷 / 11期

关键词：

D O I：

10.1023/A:1022832217848

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this contribution we show that the screening effect around the Si dopant atoms in GaAs can be observed not only at low temperature, as reported earlier, but also at room temperature.

引用

页码：1621 / 1624

页数：4

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