SI DONORS (SI(GA)) IN GAAS OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

被引：12

作者：

ZHENG, JF ^{[1
]}

LIU, X ^{[1
]}

WEBER, ER ^{[1
]}

OGLETREE, DF ^{[1
]}

SALMERON ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DEPT MAT SCI,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the direct observation of Si(Ga) donors in the top six layers of GaAs(110). Surface Si(Ga) has a localized electronic feature due to its dangling bond, while subsurface Si(Ga) produces delocalized protrusions in filled and empty state scanning tunneling microscopy images, with a full width at half-maximum of approximately 25 angstrom and a height from approximately 0.2 to 2 angstrom, depending on the sample bias and location under the surface. The delocalized features of subsurface Si(Ga) can be understood in terms of the perturbation of the local band structure by the Coulomb potential of Si(Ga).

引用

页码：2104 / 2106

页数：3

共 14 条

[1] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].