Secondary electron emission of MgO thin layers prepared by the spin coating method

被引:9
作者
Lee, J [1 ]
Jeong, T [1 ]
Yu, S [1 ]
Jin, S [1 ]
Heo, J [1 ]
Yi, W [1 ]
Kim, JM [1 ]
机构
[1] Samsung Adv Inst Technol, Ctr Electron Emiss Source, Natl Creat Res Initiat, Suwon 440600, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期
关键词
D O I
10.1116/1.1383079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three series of MgO thin films were prepared by the spin coating of MgO precursor solutions (aqueous and organic based solutions) and by electron-beam evaporation. The quality of the films coated on the Si (100) substrate was characterized by observing crystallinity and surface roughness of the films. The measurement of the secondary electron emission (SEE) yield of the MgO films does not reveal any significant dependence on the MgO film fabrication process. However, it was found that the magnitude of the SEE yield is strongly dependent on the sample bias voltage. The maximum SEE yield of over 6 was obtained for the films prepared by both aqueous and organic based solutions. MgO layer formation by precursor solutions is a promising method considering the fact of its easiness and convenience, which also gives a relatively large SEE yield comparable to the MgO layer prepared by electron-beam evaporation. (C) 2001 American Vacuum Society.
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页码:1366 / 1369
页数:4
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