Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles

被引：26

作者：

Niquet, YM ^{[1
]}

Priester, C ^{[1
]}

Gourgon, C ^{[1
]}

Mariette, H ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, Dept ISEN, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.57.14850

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Inhomogeneous strain relaxation in quantum dots etched from biaxially strained quantum wells is calculated. Strain-induced band effects and piezoelectric potentials are discussed for several wires and dots (mainly II-VI systems, but results are generalized to other zinc-blende systems such as InxGa1-xAs/GaAs). General trends for varying design parameters of the nanostructures are given. Results are compared to data obtained from optical spectroscopy experiments. The case of a system under tensile strain that evidences an unexpected relaxation phenomenon is also discussed both experimentally and theoretically.

引用

页码：14850 / 14859

页数：10

共 40 条

[1] OPTICAL STUDIES OF THE PIEZOELECTRIC EFFECT IN (111)-ORIENTED CDTE/CD1-XZNXTE STRAINED QUANTUM-WELLS [J].

ANDRE, R ;

DESHAYES, C ;

CIBERT, J ;

DANG, LS ;

TATARENKO, S ;

SAMINADAYAR, K .

PHYSICAL REVIEW B, 1990, 42 (17) :11392-11395

[2] Room temperature emission in narrow (14nm) Cd0.35Zn0.65Se/ZnSe quantum wires with strong lateral confinement effects [J].

Bacher, G ;

Illing, M ;

Spiegel, R ;

Kummell, T ;

Herz, K ;

Forchel, A ;

Jobst, B ;

Hommel, D ;

Landwehr, G .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :455-458

[3]

BIR G, 1960, SOV PHYS-SOLID STATE, V51, P1502

[4]

Bir GL., 1974, Symmetry and Strain-Induced Effects in Semiconductors

[5]

DAUGE M, 1988, LECT NOTES MATH, V1341

[6] STRAIN AND PIEZOELECTRIC FIELDS IN ARBITRARILY ORIENTED SEMICONDUCTOR HETEROSTRUCTURES .2. QUANTUM WIRES [J].

DECARO, L ;

TAPFER, L .

PHYSICAL REVIEW B, 1995, 51 (07) :4381-4387

[7] Finite-size effects in one-dimensional strained semiconductor heterostructures [J].

DeCaro, L ;

Tapfer, L .

PHYSICAL REVIEW B, 1996, 54 (15) :10575-10584

[8] A simple method for calculating strain distributions in quantum dot structures [J].

Downes, JR ;

Faux, DA ;

OReilly, EP .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (10) :6700-6702

[9] The Fourier-series method for calculating strain distributions in two dimensions [J].

Downes, JR ;

Faux, DA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (22) :4509-4520

[10] THE FOURIER-SERIES METHOD FOR THE CALCULATION OF STRAIN RELAXATION IN STRAINED-LAYER STRUCTURES [J].

FAUX, DA .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :186-192

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