SiC-power rectifiers

被引：5

作者：

Held, R ^{[1
]}

Füllmann, M ^{[1
]}

Niemann, E ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol 2, DE-60528 Frankfurt, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

rectifiers; Schottky Diodes; SiC power devices; switching;

D O I：

10.4028/www.scientific.net/MSF.338-342.1407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This contribution will focus on recent progress in Merged-PN/Schottky-Diodes (MPS) or 'Junction Barrier Schottky-Diodes' (JBS) [2] based on 4H-SiC first published on the ICSCIII-N'97 [1] conference. We will present measurements on large area 600V-SiC-Schottky-diodes which are able to handle more than 50 A. The switching behavior of these SiC-diodes is drastically improved in comparison to Si-diodes. The IGBT turn-on characteristic at 50 A will be demonstrated with a single SiC-Schottky-diode chip as the free wheeling diode.

引用

页码：1407 / 1410

页数：4