SiC merged p-n Schottky rectifiers for high voltage applications

被引:34
作者
Held, R [1 ]
Kaminski, N [1 ]
Niemann, E [1 ]
机构
[1] Daimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany
来源
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词
Schottky diode; high voltage rectifier; MPS-rectifier; JBS-rectifier;
D O I
10.4028/www.scientific.net/MSF.264-268.1057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A method of reducing reverse currents and increasing breakdown voltages without inducing negative effects on switching behavior in silicon carbide Schottky diodes is proved successfully. Implantation of p-regions in the surface of the n-drift region below the Schottky metal form face to face p-n junctions which screen the Schottky contact from high electrical fields. This results in a reduction of the reverse current and an increase of the breakdown voltage to the limit of a 'pure' SIC p-n diode. It is shown, that in contrast to silicon based devices, SiC merged p-n/Schottky (MPS) rectifier preserve their excellent unipolar switching behavior.
引用
收藏
页码:1057 / 1060
页数:4
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