SiC merged p-n Schottky rectifiers for high voltage applications
被引:34
作者:
Held, R
论文数: 0引用数: 0
h-index: 0
机构:
Daimler Benz AG, Res & Technol, D-60528 Frankfurt, GermanyDaimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany
Held, R
[1
]
Kaminski, N
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h-index: 0
机构:
Daimler Benz AG, Res & Technol, D-60528 Frankfurt, GermanyDaimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany
Kaminski, N
[1
]
Niemann, E
论文数: 0引用数: 0
h-index: 0
机构:
Daimler Benz AG, Res & Technol, D-60528 Frankfurt, GermanyDaimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany
Niemann, E
[1
]
机构:
[1] Daimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany
来源:
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2
|
1998年
/
264-2卷
关键词:
Schottky diode;
high voltage rectifier;
MPS-rectifier;
JBS-rectifier;
D O I:
10.4028/www.scientific.net/MSF.264-268.1057
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A method of reducing reverse currents and increasing breakdown voltages without inducing negative effects on switching behavior in silicon carbide Schottky diodes is proved successfully. Implantation of p-regions in the surface of the n-drift region below the Schottky metal form face to face p-n junctions which screen the Schottky contact from high electrical fields. This results in a reduction of the reverse current and an increase of the breakdown voltage to the limit of a 'pure' SIC p-n diode. It is shown, that in contrast to silicon based devices, SiC merged p-n/Schottky (MPS) rectifier preserve their excellent unipolar switching behavior.