Analysis of reverse current-voltage characteristics of Ti/6H-SiC Schottky diodes

被引：18

作者：

Schroder, C ^{[1
]}

Heiland, W ^{[1
]}

Held, R ^{[1
]}

Loose, W ^{[1
]}

机构：

[1] DAIMLER BENZ RES INST,D-60528 FRANKFURT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期

关键词：

D O I：

10.1063/1.115638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigations on electrical properties of as fabricated and annealed titanium 6H-SiC Schottky contacts were performed by current-voltage (I-V) and capacitance-voltage (C-V) measurements in a temperature range of 100-460 K. Both the Schottky barrier height (SBH) Phi(b) and the ideality factor n were found to depend on temperature and voltage. In addition, a systematic discrepancy between barrier heights extracted from I-V and C-V curves was observed. An explanation is given for the high leakage currents which are still a general problem of SiC Schottky diodes. On the basis of two analytical models we are able to describe this behavior assuming the formation of a very thin inhomogeneous interfacial layer between metal and semiconductor. (C) 1996 American Institute of Physics.

引用

页码：1957 / 1959

页数：3

共 15 条

[1] HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES [J].