Size scaling of the addition spectra in silicon quantum dots

被引：11

作者：

Boehm, M

Hofheinz, M

Jehl, X

Sanquer, M

Vinet, M

Previtali, B

Fraboulet, D

Mariolle, D

Deleonibus, S

机构：

[1] CEA, DRFMC, F-38054 Grenoble, France

[2] CEA, DRT, LETI, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.71.033305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We compare the standard deviation of the addition spectra with theory in the high electron concentration regime. We find that the standard deviation scales as the inverse area of the dot and its absolute value are comparable to the energy spacing of the one-particle spectrum.

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页数：4

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