Ballistic spin-filter transistor

被引：75

作者：

Grundler, D

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.63.161307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-dependent ballistic transport in a mesoscopic two-dimensional electron system with two metallic ferromagnetic electrodes is studied using the Landauer-Buttiker formalism. Our calculations predict a pronounced spin-valve effect in the ballistic regime for, e.g., Fe on InAs. The origin is spin filtering at the interfaces. In this spintronic device, the magnetoconductance ratio can be controlled via a gate voltage.

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页数：4

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