Tungsten doping into vanadium dioxide thermochromic films by high-energy ion implantation and thermal annealing

被引：147

作者：

Jin, P ^{[1
]}

Nakao, S ^{[1
]}

Tanemura, S ^{[1
]}

机构：

[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 462, Japan

来源：

THIN SOLID FILMS | 1998年 / 324卷 / 1-2期

基金：

日本科学技术振兴机构;

关键词：

vanadium dioxide; tungsten doping; thermochromic; thin films; ion implantation;

D O I：

10.1016/S0040-6090(98)00362-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Doping of W into VO2 was done by high-energy (1.0 MeV) ion beam implantation and thermal annealing for the first time. The implantation was performed with different ion doses of 0.86, 2.18 and 6.12 x 10(15) ions/cm(2) on a VO2 polycrystalline film sputter-deposited on Si. The film was characterized by Rutherford backscattering spectroscopy, atomic force microscopy and spectrophotometry. Deterioration of thermochromism and change in surface morphology after implantation, resulting from the irradiation damage such as amorphization, were observed and the extent increased with ion dose. Recrystallization of the implanted film and recovery of thermochromism were obtained by annealing at 400 degrees C in air for 60 min. The W doping resulted in a substantial reduction in the critical temperature tau(c) for the phase transition of VO2. (C) 1998 Published by Elsevier Science S.A. All rights reserved.

引用

页码：151 / 158

页数：8

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