Electronic structure of the single-domain Si(111)-(3x1)-Li surface

被引：12

作者：

Bromberger, C ^{[1
]}

Crain, JN

Altmann, KN

Paggel, JJ

Himpsel, FJ

Fick, D

机构：

[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[4] Free Univ Berlin, Inst Expt Phys 1, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.68.075320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band structure of the single-domain Si(111)-(3x1)-Li surface is investigated by angular resolved photoelectron spectroscopy (ARPES) with synchrotron radiation. Vicinal surfaces are used as templates for obtaining a single-domain (3x1) reconstruction. The surface band structure consists of a single, well-pronounced state at about 0.9 eV below the valence band maximum. Its dispersion matches local density calculations for the honeycomb-chain-channel (HCC) structure, but the calculated energy is 0.31 eV too high. This shift is reminiscent of localized surface states on other silicon surfaces, such as Si(111)-H.

引用

页数：7

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