Fractional band filling in an atomic chain structure

被引：202

作者：

Crain, JN

Kirakosian, A

Altmann, KN

Bromberger, C

Erwin, SC

McChesney, JL

Lin, JL

Himpsel, FJ

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[3] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[4] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.90.176805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new chain structure of Au is found on stepped Si(111) which exhibits a 1/4-filled band and a pair of greater than or equal to1/2-filled bands with a combined filling of 4/3. Band dispersions and Fermi surfaces for Si(553)-Au are obtained by photoemission and compared to that of Si(557)-Au. The dimensionality of both systems is determined using a tight binding fit. The fractional band filling makes it possible to preserve metallicity in the presence of strong correlations.

引用

页码：4 / 176805

页数：4

共 33 条

[1] Observation of a quasi-1D Mott-Hubbard insulator: The re-entrant Na/Si(111)-3 x 1 surface [J].