Observation of a quasi-1D Mott-Hubbard insulator: The re-entrant Na/Si(111)-3 x 1 surface

被引:20
作者
Ahn, JR
Kim, ND
Lee, SS
Lee, KD
Yu, BD
Jeon, D
Kong, K
Chung, JW
机构
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Basic Sci Res Inst, Pohang 790784, South Korea
[3] Univ Seoul, Dept Phys, Seoul 130743, South Korea
[4] Myong Ji Univ, Dept Phys, Seoul 449728, South Korea
[5] Univ Seoul, IQUIPS, Seoul 130743, South Korea
来源
EUROPHYSICS LETTERS | 2002年 / 57卷 / 06期
关键词
D O I
10.1209/epl/i2002-00589-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have investigated the origin of a semiconducting phase of the re-entrant Na/Si(111)-3 x 1 surface formed by adding extra adatoms on the earlier 3 x 1 phase at 1/3 monolayers (MLs). The additional Na adatoms are found to form quasi-one-dimensional (1D) atomic chains in our scanning tunnelling microscopy images while keeping the surface semiconducting. The unique features in our valence band and in high-resolution electron-energy-loss spectra suggest that the re-entrant 3 x 1 surface is a Mott-Hubbard type insulator. We thus report a novel quasi-1D insulator-insulator transition where electron-electron correlation plays a decisive role.
引用
收藏
页码:859 / 865
页数:7
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