STRUCTURAL AND ELECTRONIC-PROPERTIES OF ORDERED SINGLE AND MULTIPLE LAYERS OF NA ON THE SI(111) SURFACE

被引:124
作者
JEON, D
HASHIZUME, T
SAKURAI, T
WILLIS, RF
机构
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
[2] PENN STATE COLL,DEPT PHYS,STATE COLL,PA 16802
关键词
D O I
10.1103/PhysRevLett.69.1419
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Na-induced 3 x 1 reconstruction on the Si(111) surface was studied using a scanning tunneling microscope and other tools. Atomic images showed that this surface consisted of Na zigzag chains separated by a missing row, which covered the bulk-terminated Si(111) 1 x 1 substrate at the coverage of 2/3. Upon further deposition, a Na multilayer was grown following the Stranski-Krastanov mode. Tunneling I-V curves showed that the first layer of Na was insulating but the insulator-metal transition occurred in the second layer. We propose, based on the structural analysis, that this transition represents a two-dimensional Mott-Hubbard system.
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页码:1419 / 1422
页数:4
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