Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earth metal (Mg,Ba)-adsorbed Si(111) surface

被引:12
作者
Ahn, JR
Lee, SS
Kim, ND
Min, JH
Hwang, CG
Chung, JW
机构
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Basic Sci Res Inst, Pohang 790784, South Korea
关键词
D O I
10.1103/PhysRevLett.84.1748
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report evidence of a disorder-driven Mott-Hubbard-type localization on the alkali-earth metal (AEM) (Mg,Ba)-adsorbed Si(111)-(7 X 7) surface. The clean metallic Si(111) surface is found to undergo a two-dimensional (2D) metal-insulator transition as randomly distributed AEM adsorbates cause disorder on the surface. A well-defined electron-energy-loss peak unique to the insulating phase is attributed to an interband excitation between the split Hubbard bands originated from a metallic surface band at Fermi energy. A quantitative analysis of the loss peak reveals that the AEM-induced insulating surfaces are of a Mott-Hubbard type driven essentially by disorder.
引用
收藏
页码:1748 / 1751
页数:4
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