High electron mobility W-doped In2O3 thin films by pulsed laser deposition -: art. no. 112108

High electron mobility thin films of In2-xWxO3+y(0 <= x <= 0.075) were prepared on amorphous SiO2 and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm(2)/Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x similar to 0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3m(e). In2-xWxO3+y films have high visible transmittance of similar to 80%. (c) 2005 American Institute of Physics.