Growth rate limiting mechanisms of YBa2Cu3O7 films manufactured by ex situ processing

YBa2Cu3O7 films were fabricated on SrTiO3 substrates using the BaF2 ex situ process. Precursor films 1, 3 and 5 mum thick were processed in an atmospheric pressure reactor using a gas mixture of oxygen, nitrogen and water vapor. The films were processed at different water vapor pressures and it was observed that the him growth rate was independent of film thickness and proportional to the square root of the water vapor pressure. The dependence of the film growth rate on film area was also investigated for film areas varying from 10 to 160 mm(2). Surprisingly, it was observed that the growth rate was inversely proportional to square root of the area of the him. A theoretical model is developed and applied to the experimental results presented in this paper. The model correctly predicts the inverse square root dependence of the film growth rate on sample area. In addition, it predicts that it will be difficult to process long samples, such as tapes, in simple reactor geometries. (C) 2001 Elsevier Science B.V. All rights reserved.