Ambipolar organic field-effect transistor using gate insulator hysteresis

被引：14

作者：

Mizuno, E ^{[1
]}

Taniguchi, M ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 14期

关键词：

D O I：

10.1063/1.1899773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic field-effect transistor based on a copper-phthalocyanine and cyanoethylpullulan gate insulator showed ambipolar operation using gate insulator hysteresis, which appeared at less than 1 mHz. The gate insulator possesses spontaneous polarization of 1.6 mu C/cm(2) and a coercive electric field of 50 kV/cm. After poling in an effort to obtain a large amount of accumulated charge, the field-effect mobilities of the hole and electron were 4.1x10(-3) and 3.5x10(-6) cm(2)/Vs, respectively. The on/off ratio at V-SG=+/- 10 V was 6x10(4) for the p type and 70 for the n type. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 25 条

[1] Organic field-effect transistors with high mobility based on copper phthalocyanine [J].