Effect of high current injection on the blue radiative recombination in InGaN single quantum well light emitting diodes

被引：4

作者：

Taguchi, T ^{[1
]}

Kudo, H ^{[1
]}

Yamada, Y ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 755, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

InGaN; SQW LED; current injection; blue emission; hot electron;

D O I：

10.1143/JJAP.37.1462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiative recombination properties of blue electroluminescence (EL) in the vicinity of 460 nm (about 2.7 eV) in an InGaN-based single quantum well light emitting diode (LED) have been investigated at 77 K under forward-bias pulsed high-current injection condition. The 460 nm blue emission band accompanying the LO-phonon sidebands was clearly observed at forward-biased steady-state currents, while its LO-phonon replicas were smeared out with increasing pulsed current. It is revealed that the forward-biased injection EL spectrum reflects the distribution function of hot electrons injected into the active layer. Emission spectral characteristics can be quantitatively explained by the drifted Maxwellian distribution function of electrons. The temperature of hot electrons was estimated to be about 400 K at current density of about 4500 A/cm(2), which is much higher than the lattice temperature.

引用

页码：1462 / 1464

页数：3

共 12 条

[1] ELECTRON-ELECTRON INTERACTIONS IN MONTE-CARLO TRANSPORT CALCULATIONS [J].

BACCHELLI, L ;

JACOBONI, C .

SOLID STATE COMMUNICATIONS, 1972, 10 (01) :71-+

[2] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[3]

Huang ZC, 1996, MATER RES SOC SYMP P, V395, P789

[4] EXPERIMENTAL AND THEORETICAL DETERMINATION OF HOT-ELECTRON DISTRIBUTION IN GAAS AND RELATED MIXED-CRYSTALS [J].

INOUE, M ;

TAKENAKA, N ;

SHIRAFUJI, J ;

INUISHI, Y .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :29-33

[5]

INOUE M, 1976, P 13 INT C PHYS SEM, P1239

[6]

Nakamura S, 1996, MATER RES SOC SYMP P, V395, P879

[7] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

APPLIED PHYSICS LETTERS, 1993, 62 (19) :2390-2392

[8]

RIDLEY BK, 1989, QUANTUM PROCESS SEMI

[9]

TAGUCHI T, 1997, 1997 INT C SOL STAT, P212

[10]

TAKENAKA N, 1980, THESIS OSAKA U

← 1 2 →