Proper ferroelastic phase transitions in thin epitaxial films with symmetry-conserving and symmetry-breaking misfit strains

被引:13
作者
Bratkovsky, AM
Levanyuk, AP
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 13期
关键词
D O I
10.1103/PhysRevB.64.134107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study how the ferroelastic domain structure sets in in an epitaxial film of a material with second-order proper ferroelastic transition. The domain structures considered are similar to either a(1)/a(2)/a(1)/a(2) or c/a/c/a structures in perovskite ferroelectrics. If the "extrinsic" misfit strain, not associated with the transition, does not break the symmetry of the high-temperature phase, the phase transition in the film occurs at somewhat lower temperature compared to the bulk. The loss of stability then occurs with respect to a sinusoidal strain wave, which evolves into the domain structure with practically the same geometry and approximately the same period. In the presence of the symmetry-breaking component of the misfit strain ("extrinsic" misfit) the character of the phase transition is qualitatively different. In this case it is a topological transition between single-domain and multidomain states, which starts from a low density of the domain walls.
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页数:7
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