Ultrafast carrier dynamics in laser-excited materials:: subpicosecond optical studies

被引：63

作者：

Quére, F ^{[1
]}

Guizard, S

Martin, P

Petite, G

Gobert, O

Meynadier, P

Perdrix, M

机构：

[1] CEA, Ctr Saclay, Serv Rech Surfaces & Irradiat Mat, F-91191 Gif Sur Yvette, France

[2] CEA, Ctr Saclay, Serv Photons Atomes Mol, F-91191 Gif Sur Yvette, France

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 1999年 / 68卷 / 03期

关键词：

D O I：

10.1007/s003400050649

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we present measurements of the excited carrier density in various wide-band-gap oxides (SiO2, MgO and Al2O3) irradiated by short laser pulses (70 fs to 1.3 ps) at intensities below and above breakdown threshold. This is achieved with the help of time-resolved interferometry in the frequency domain, which was successfully used to study the dynamics of photoexcited carriers in insulators. The results obtained under different experimental conditions, distance from the surface, pump intensities and duration, during or after the pump pulse, are discussed and compared to the models recently developed to explain optical breakdown.

引用

页码：459 / 463

页数：5

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