The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

被引：1

作者：

Afifuddin, A ^{[1
]}

Butcher, KSA ^{[1
]}

Tansley, TL ^{[1
]}

Timmers, H ^{[1
]}

Elliman, RG ^{[1
]}

Weijers, TDM ^{[1
]}

Ophel, TR ^{[1
]}

机构：

[1] Macquarie Univ, Dept Phys, Semicond Sci & Technol Labs, Sydney, NSW 2109, Australia

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV An ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.

引用

页码：51 / 54

页数：4

共 6 条

[1] Simultaneous hydrogen detection with an ERD gas ionization detector [J].

Elliman, RG ;

Timmers, H ;

Ophel, TR ;

Weijers, TDM ;

Wielunski, LS ;

Harding, GL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :231-234

[2] HIGHLY P-TYPED MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1708-L1711

[3] GaN: Processing, defects, and devices [J].

Pearton, SJ ;

Zolper, JC ;

Shul, RJ ;

Ren, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :1-78

[4] Simplifying position-sensitive gas-ionization detectors for heavy ion elastic recoil detection [J].

Timmers, H ;

Ophel, TR ;

Elliman, RG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 (161) :19-28

[5] Electrical isolation of GaN by ion implantation damage: Experiment and model [J].

Uzan-Saguy, C ;

Salzman, J ;

Kalish, R ;

Richter, V ;

Tish, U ;

Zamir, S ;

Prawer, S .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2441-2443

[6] Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500 degrees C [J].

Zhou, B ;

Li, X ;

Tansley, TL ;

Butcher, KSA .

JOURNAL OF CRYSTAL GROWTH, 1996, 160 (3-4) :201-206

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