Benzo[1,2-b:4,5-b′]dithiophene-based copolymers applied in bottom-contact field-effect transistors

被引:11
作者
Leenen, Mark A. M. [1 ,2 ,3 ]
Cucinotta, Fabio [2 ,3 ]
Pisula, Wojciech [4 ,5 ]
Steiger, Juergen [1 ]
Anselmann, Ralf [1 ]
Thiem, Heiko [1 ]
De Cola, Luisa [2 ,3 ]
机构
[1] Evon Degussa GmbH, Creavis Technol & Innovat, D-45764 Marl, Germany
[2] Univ Munster, Inst Phys, D-48149 Munster, Germany
[3] Univ Munster, CeNTech, D-48149 Munster, Germany
[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
[5] Evon Degussa GmbH, Proc Technol & Engn, Proc Technol New Proc, D-63457 Hanau, Germany
关键词
Polymer synthesis; Polymer materials; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; POLYMER; SEMICONDUCTORS; DERIVATIVES; POLY(3-HEXYLTHIOPHENE); IMPURITIES; STABILITY; ELECTRON; MOBILITY;
D O I
10.1016/j.polymer.2010.05.022
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Three copolymers of benzo[1,2-b:4,5-b ']dithiophene and 3,3'-bis(alkyl)-5,5'-bithiophene (dodecyl, tetradecyl and hexadecyl side chains) have been synthesized through Stille copolymerization. The polymers have number-average molecular weights over 20 kg/mol, are well-packed in the bulk and thin film, and possess an ionization potential of -5.1 eV in thin film, which offers stability versus oxidation in environmental conditions. The thin film packing of the polymer with dodecyl side chains leads to an excimeric emission upon excitation, which is not observed for longer side chain lengths. The presence of the dimers responsible for this excimer formation results in a device performance improvement as well. Field-effect transistors fabricated from these copolymers have On/Off ratios >10(7), equal saturation and linear hole mobilities above 10(-2) cm(2)/Vs, almost no hysteresis and turn-on voltages around 0 V in bottom-contact devices. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3099 / 3107
页数:9
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