The effects of metal impurities in poly[(2,5-bis(3-decylthiophen-2-yl)thieno[2,3-b]thiophene] on field-effect transistor properties

被引：8

作者：

Bjorklund, Niklas ^{[1
,2
]}

Lill, Jan-Olof ^{[1
,2
,3
]}

Rajander, Johan ^{[4
]}

Osterbacka, Ronald ^{[1
,2
]}

Tierney, Steven ^{[5
]}

Heeney, Martin ^{[5
]}

McCulloch, Iain ^{[5
]}

Coelle, Michael ^{[5
]}

机构：

[1] Abo Akad Univ, Ctr Excellence Funct Mat, SF-20500 Turku, Finland

[2] Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland

[3] Abo Akad Univ, Accelerator Lab, SF-20500 Turku, Finland

[4] Abo Akad Univ, Analyt Chem Lab, SF-20500 Turku, Finland

[5] Merck Chem Ltd, Southampton SO16 7QD, Hants, England

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 02期

基金：

芬兰科学院;

关键词：

Field-effect transistor; PIXE; Nuclear analysis; Purity; OFET; SUBTHRESHOLD CHARACTERISTICS; SEMICONDUCTORS; PIXE;

D O I：

10.1016/j.orgel.2008.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used particle induced X-ray emission analysis and particle induced gamma-ray emission analysis to determine the elemental impurity concentrations in polyl(2,5-bis(3-decylthiophen-2-yl)thieno[2,3-b]thiophene] samples that have undergone different washing and extraction procedures to remove impurities. Field-effect transistors (FETs) were fabricated from the materials and their electrical characteristics show no significant differences between the devices made from different material samples. Reducing the metal residue levels below the ones measured in the starting material (300 mg/kg Fe, 7 mg/kg Zn. 3000 mg/kg Pd and 12000 mg/kg Sn) does not improve the FET performance. This suggests that it is not necessary to completely remove metal residues in the polymer for FET applications. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：215 / 221

页数：7

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