On-site Coulomb energy versus crystal-field splitting for the insulator-metal transition in La1-xSrxTiO3 -: art. no. 104420

被引：32

作者：

Higuchi, T ^{[1
]}

Baba, D

Takeuchi, T

Tsukamoto, T

Taguchi, Y

Tokura, Y

Chainani, A

Shin, S

机构：

[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1628601, Japan

[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[3] RIKEN, Hyogo 6795143, Japan

[4] Univ Tokyo, Inst Solid State Phys, Chiba 2795143, Japan

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.68.104420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The on-site Coulomb energy (U-dd) and crystal-field splitting (10Dq) of doped Mott-insulator La1-xSrxTiO3 have been estimated using resonant soft-x-ray emission spectroscopy (SXES). The Raman scattering of the e(g)- and t(2g)-resonant SXES spectra indicate features due to the d-d transitions corresponding to the 10Dq and U-dd/2, respectively. The U-dd is in accord with the energy separation between the lower and the upper Hubbard bands obtained by photoemission and inverse-photoemission spectra. The U-dd does not change much around two metal-insulator transitions at x=0.05 and 0.95 in La1-xSrxTiO3, while the crystal-field splitting increases as a function of x.

引用

页数：5

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