Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser

被引：51

作者：

Gerster, E ^{[1
]}

Ecker, I ^{[1
]}

Lorch, S ^{[1
]}

Hahn, C ^{[1
]}

Menzel, S ^{[1
]}

Unger, P ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 12期

关键词：

D O I：

10.1063/1.1625784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an orange-emitting intracavity frequency-doubled semiconductor disk laser based on the material system GaAsSb/GaAs. The infrared fundamental wavelength of lambda=1220 nm corresponds to a second-harmonic wavelength of lambda=610 nm. The second-harmonic generation is done using a lithium-triborate crystal as the nonlinear material. We have achieved an orange continuous-wave frequency-doubled laser output power of 30 mW in the fundamental transverse mode at a wavelength of lambda=610 nm. (C) 2003 American Institute of Physics.

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页码：7397 / 7401

页数：5

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