Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

We report data on GaAsSb single-quantum-well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 mu m in a 1250-mu m-long device has been observed, Minimum threshold current densities of 535 A/cm(2) were measured in 2000-mu m-long lasers, We also measured internal losses of 25 cm(-1), internal quantum efficiencies of 30%-38% and characteristic temperatures To of 67 degrees C-77 degrees C. From these parameters, a gain constant G(o) of 1660 cm(-1) and a transparency current density J(tr) of 134 A/cm(2) were calculated. The results indicate the potential for fabricating 1.3-mu m vertical-cavity surface-emitting lasers from these materials.