Light-emitting diodes and laser diodes based on a Ga1-xInxAs/GaAs1-ySby type II superlattice on InP substrate

被引:55
作者
Peter, M [1 ]
Kiefer, R [1 ]
Fuchs, F [1 ]
Herres, N [1 ]
Winkler, K [1 ]
Bachem, KH [1 ]
Wagner, J [1 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
关键词
D O I
10.1063/1.123738
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1-xInxAs/GaAs1-ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 mm, the index-guided diode lasers displayed cw laser emission at 1.71 mm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED. (C) 1999 American Institute of Physics. [S0003-6951(99)03914-5].
引用
收藏
页码:1951 / 1953
页数:3
相关论文
共 17 条
[1]   TYPE-II BAND ALIGNMENT IN SI/SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY [J].
BAIER, T ;
MANTZ, U ;
THONKE, K ;
SAUER, R ;
SCHAFFLER, F ;
HERZOG, HJ .
PHYSICAL REVIEW B, 1994, 50 (20) :15191-15196
[2]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[3]   HIGH-POWER MULTIPLE-QUANTUM-WELL GAINASSB/ALGAASSB DIODE-LASERS EMITTING AT 2.1 MU-M WITH LOW THRESHOLD CURRENT-DENSITY [J].
CHOI, HK ;
EGLASH, SJ .
APPLIED PHYSICS LETTERS, 1992, 61 (10) :1154-1156
[4]   INGAAS/INGAASP/INP STRAINED-LAYER QUANTUM-WELL LASERS AT SIMILAR-TO-2-MU-M [J].
FOROUHAR, S ;
KSENDZOV, A ;
LARSSON, A ;
TEMKIN, H .
ELECTRONICS LETTERS, 1992, 28 (15) :1431-1432
[5]   Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy [J].
Hu, J ;
Xu, XG ;
Stotz, JAH ;
Watkins, SP ;
Curzon, AE ;
Thewalt, MLW ;
Matine, N ;
Bolognesi, CR .
APPLIED PHYSICS LETTERS, 1998, 73 (19) :2799-2801
[6]  
JOULLIE A, 1998, P 16 IEEE INT SEM LA, P227
[7]   GROWTH AND PROPERTIES OF GAASSB/INGAAS SUPERLATTICES ON INP [J].
KLEM, JF ;
KURTZ, SR ;
DATYE, A .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :628-632
[8]   ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS [J].
LEE, H ;
YORK, PK ;
MENNA, RJ ;
MARTINELLI, RU ;
GARBUZOV, DZ ;
NARAYAN, SY ;
CONNOLLY, JC .
APPLIED PHYSICS LETTERS, 1995, 66 (15) :1942-1944
[9]   Type II mid-IR lasers operating above room temperature [J].
Malin, JI ;
Felix, CL ;
Meyer, JR ;
Hoffman, CA ;
Pinto, JF ;
Lin, CH ;
Chang, PC ;
Murry, SJ ;
Pei, SS .
ELECTRONICS LETTERS, 1996, 32 (17) :1593-1595
[10]   TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED [J].
MEYER, JR ;
HOFFMAN, CA ;
BARTOLI, FJ ;
RAMMOHAN, LR .
APPLIED PHYSICS LETTERS, 1995, 67 (06) :757-759