GROWTH AND PROPERTIES OF GAASSB/INGAAS SUPERLATTICES ON INP

被引：46

作者：

KLEM, JF ^{[1
]}

KURTZ, SR ^{[1
]}

DATYE, A ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT CHEM & NUCL ENGN,ALBUQUERQUE,NM 87131

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91053-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAsSb/InGaAs superlattices of varying thicknesses have been grown nominally lattice matched to InP and characterised by X-ray diffraction, transmission electron microscopy, Hall measurement, and photoluminescence. These structures exhibit net Hall electron densities of approximately 10(15) cm-3 at room temperature. X-ray diffraction results demonstrate the existence of an intrinsic interfacial strain between these two materials. Low-temperature photoluminescence in the range 2.3-2.8-mu-m is consistent with the expected type II band alignment in this system, and allows determination of the band offsets between these materials.

引用

页码：628 / 632

页数：5

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