CONDUCTION-BAND EDGE DISCONTINUITY OF INGAAS/GAASSB HETEROSTRUCTURES LATTICE-MATCHED TO INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

SUGIYAMA, Y

FUJII, T

NAKATA, Y

MUTO, S

MIYAUCHI, E

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90419-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：363 / 366

页数：4

共 13 条

[1]

BURNS G, 1985, SOLID STATE PHYS, P500

[2] TUNNEL TRIODE - TUNNELING BASE TRANSISTOR [J].

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :687-689

[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].

CHERNG, MJ ;

STRINGFELLOW, GG ;

COHEN, RM .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679

[4] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].

CHIU, TH ;

TSANG, WT ;

CHU, SNG ;

SHAH, J ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410

[5] INTERFACE STUDIES OF MBE-GROWN GAINAS/GAASSB HETEROSTRUCTURES LATTICE-MATCHED TO INP BY AUGER-ELECTRON SPECTROSCOPY [J].

FUJII, T ;

NAKATA, Y ;

SUGIYAMA, Y ;

TODA, Y ;

MIYAUCHI, E .

ELECTRONICS LETTERS, 1988, 24 (19) :1210-1211

[6]

KLEM J, 1987, P INT C SPIE, V796

[7] GROWTH AND CHARACTERIZATION OF GAAS0.5SB0.5 LATTICE-MATCHED TO INP BY MOLECULAR-BEAM EPITAXY [J].

NAKATA, Y ;

FUJII, T ;

SANDHU, A ;

SUGIYAMA, Y ;

MIYAUCHI, E .

JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) :655-658

[8] OPTICAL-ABSORPTION OF IN1-XGAXAS-GASB1-YASY SUPER-LATTICES [J].

SAIHALASZ, GA ;

CHANG, LL ;

WELTER, JM ;

CHANG, CA ;

ESAKI, L .

SOLID STATE COMMUNICATIONS, 1978, 27 (10) :935-937

[9] NEW SEMICONDUCTOR SUPERLATTICE [J].

SAIHALASZ, GA ;

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :651-653

[10] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

CHANG, LL ;

LUDEKE, R ;

CHANG, CA ;

SAIHALASZ, GA ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :211-213

← 1 2 →