TUNNEL TRIODE - TUNNELING BASE TRANSISTOR

[1] ATALLA MM, 1963, SOLID STATE ELECTRON, V9, P245

[2] CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[4] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J]. THIN SOLID FILMS, 1976, 36 (02) : 285 - 298

[5] ENERGY GAP IN SUPERCONDUCTORS MEASURED BY ELECTRON TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (04) : 147 - 148

[6] REALIZATION OF A GAAS-GE WIDE BAND GAP EMITTERTRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 102 - &

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] MEAD CA, 1960, P IRE, V48, P359

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[10] NEW SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653

[1] ATALLA MM, 1963, SOLID STATE ELECTRON, V9, P245

[2] CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[4] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J]. THIN SOLID FILMS, 1976, 36 (02) : 285 - 298

[5] ENERGY GAP IN SUPERCONDUCTORS MEASURED BY ELECTRON TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (04) : 147 - 148

[6] REALIZATION OF A GAAS-GE WIDE BAND GAP EMITTERTRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 102 - &

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] MEAD CA, 1960, P IRE, V48, P359

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[10] NEW SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653