GROWTH AND CHARACTERIZATION OF GAAS0.5SB0.5 LATTICE-MATCHED TO INP BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

NAKATA, Y

FUJII, T

SANDHU, A

SUGIYAMA, Y

MIYAUCHI, E

机构：

[1] Fujitsu Lab Ltd, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90137-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：655 / 658

页数：4

共 13 条

[1]

BENOITAL.C, 1972, PHYS REV B, V5, P4900, DOI 10.1103/PhysRevB.5.4900

[2] STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - EXPERIMENTAL-VERIFICATION [J].

CAINE, EJ ;

SUBBANNA, S ;

KROEMER, H ;

MERZ, JL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1123-1125

[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[4] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].

CHERNG, MJ ;

STRINGFELLOW, GG ;

COHEN, RM .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679

[5] OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5 [J].

CHERNG, MJ ;

CHERNG, YT ;

JEN, HR ;

HARPER, P ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :79-85

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND LOW-TEMPERATURE OPTICAL CHARACTERIZATION OF GAAS0.5SB0.5 ON INP [J].

KLEM, J ;

HUANG, D ;

MORKOC, H ;

IHM, YE ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1987, 50 (19) :1364-1366

[7]

KROEMER H, 1983, ELEC DEV L, V4, P20

[8]

McLean T. D., 1985, I PHYS C SER, V74, P145

[9] ALXGA1-XASYSB1-Y PHASE-DIAGRAM [J].

PESSETTO, JR ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :1-6

[10] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

CHANG, LL ;

LUDEKE, R ;

CHANG, CA ;

SAIHALASZ, GA ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :211-213

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