Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

被引：172

作者：

Kirsch, P. D. ^{[1
]}

Sivasubramani, P. ^{[1
]}

Huang, J. ^{[1
]}

Young, C. D. ^{[1
]}

Quevedo-Lopez, M. A. ^{[1
]}

Wen, H. C. ^{[1
,2
]}

Alshareef, H. ^{[1
]}

Choi, K. ^{[1
]}

Park, C. S. ^{[1
]}

Freeman, K. ^{[1
]}

Hussain, M. M. ^{[1
]}

Bersuker, G. ^{[1
]}

Harris, H. R. ^{[1
]}

Majhi, P. ^{[1
]}

Choi, R. ^{[1
]}

Lysaght, P. ^{[1
]}

Lee, B. H. ^{[1
]}

Tseng, H. -H. ^{[1
]}

Jammy, R. ^{[1
,3
]}

Boescke, T. S. ^{[4
]}

Lichtenwalner, D. J. ^{[5
]}

Jur, J. S. ^{[5
]}

Kingon, A. I. ^{[5
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Texas Instruments Inc, Dallas, TX 75265 USA

[3] IBM Corp, Armonk, NY 10504 USA

[4] Qimonda Dresden GmbH & Co, OHG, D-01099 Dresden, Germany

[5] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2890056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An interface dipole model explaining threshold voltage (V-t) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. V-t tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx/metal gated nFETs as follows: Sr < Er < Sc+Er < La < Sc < none. This V-t ordering is very similar to the trends in dopant electronegativity (EN) (dipole charge transfer) and ionic radius (r) (dipole separation) expected for a interfacial dipole mechanism. The resulting V-t dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence). (c) 2008 American Institute of Physics.

引用

页数：3

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