A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

被引：38

作者：

Suski, T

Franssen, G

Perlin, P

Bohdan, R

Bercha, A

Adamiec, P

Dybala, F

Trzeciakowski, W

Prystawko, P

Leszczynski, M

Grzegory, I

Porowski, S

机构：

[1] Polish Acad Sci, High Pressure Res Ctr Unipress, PL-01142 Warsaw, Poland

[2] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine

[3] Warsaw Univ Technol, Inst Phys, PL-00662 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.1649801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate efficient wavelength tuning by means of hydrostatic pressure of an InGaN/GaN laser diode grown on bulk GaN crystal. Energy shifts of the emitted light with pressure have been found to be about 36 meV/GPa, which are high magnitudes for nitride-based device structures. This result is interpreted as being indicative of efficient screening of built-in electric fields in the studied device. Furthermore, the threshold current of the laser diode was found to be independent of applied pressure. The high magnitude of the pressure coefficient allowed for the achievement of a laser tuning range of up to 10 nm in the blue/violet region, using compact pressure equipment. (C) 2004 American Institute of Physics.

引用

页码：1236 / 1238

页数：3

共 15 条

[1] Semiconductor optoelectronic devices [J].

Adams, AR ;

Silver, M ;

Allam, J .

HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II, 1998, 55 :301-352

[2] The effect of pressure and temperature on AlGaInP and AlGaAs laser diodes [J].

Bercha, A ;

Adamiec, P ;

Dybala, F ;

Bohdan, R ;

Trzeciakowski, W .

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XI, 2003, 4986 :613-620

[3]

Chichibu SF, 2000, INTRODUCTION TO NITRIDE SEMICONDUCTOR BLUE LASERS AND LIGHT EMITTING DIODES, P153

[4] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].

Della Sala, F ;

Di Carlo, A ;

Lugli, P ;

Bernardini, F ;

Fiorentini, V ;

Scholz, R ;

Jancu, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004

[5] Blue laser on high N2 pressure-grown bulk GaN [J].

Grzegory, I ;

Bockowski, M ;

Krukowski, S ;

Lucznik, B ;

Wroblewski, M ;

Weyher, JL ;

Leszczynski, M ;

Prystawko, P ;

Czernecki, R ;

Lehnert, J ;

Nowak, G ;

Perlin, P ;

Teisseyre, H ;

Purgal, W ;

Krupczynski, W ;

Suski, T ;

Dmowski, LH ;

Litwin-Staszewska, E ;

Skierbiszewski, C ;

Lepkowski, S ;

Porowski, S .

ACTA PHYSICA POLONICA A, 2001, 100 :229-232

[6] Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure [J].

Jin, SR ;

Sweeney, SJ ;

Tomic, S ;

Adams, AR ;

Riechert, H .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2335-2337

[7] HIGH-PRESSURE MEASUREMENTS ON VISIBLE SPECTRUM ALXGA1-XAS HETEROSTRUCTURE LASERS - 7100-6750-A 300-K OPERATION [J].

KIRCHOEFER, SW ;

MEEHAN, K ;

HOLONYAK, N ;

GULINO, DA ;

DRICKAMER, HG ;

BURNHAM, RD ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :406-407

[8] Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys [J].

Li, SX ;

Wu, J ;

Haller, EE ;

Walukiewicz, W ;

Shan, W ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2003, 83 (24) :4963-4965

[9] Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes [J].

Patel, D ;

Pikal, JM ;

Menoni, CS ;

Thomas, KJ ;

Kish, FA ;

Hueschen, MR .

APPLIED PHYSICS LETTERS, 1999, 75 (20) :3201-3203

[10] Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures -: art. no. 115319 [J].

Perlin, P ;

Gorczyca, I ;

Suski, T ;

Wisniewski, P ;

Lepkowski, S ;

Christensen, NE ;

Svane, A ;

Hansen, M ;

DenBaars, SP ;

Damilano, B ;

Grandjean, N ;

Massies, J .

PHYSICAL REVIEW B, 2001, 64 (11)

← 1 2 →